The effect of annealing ambient on carrier recombination in boron implanted silicon

Citation

Ratcliff, T, Fong, K, Shalav, A et al. 2014, 'The effect of annealing ambient on carrier recombination in boron implanted silicon', Physica Status Solidi: Rapid Research Letters, vol. 8, no. 10, pp. 827-830.

Year

2014

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Metals And Alloy Materials

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