The effect of annealing ambient on carrier recombination in boron implanted silicon
Citation
Ratcliff, T, Fong, K, Shalav, A et al. 2014, 'The effect of annealing ambient on carrier recombination in boron implanted silicon', Physica Status Solidi: Rapid Research Letters, vol. 8, no. 10, pp. 827-830.Year
2014Fields of Research
- Surfaces And Structural Properties Of Condensed Matter
- Metals And Alloy Materials
