Threshold current reduction for the metal-insulator transition in NbO2-x-selector devices: The effect of ReRAM integration

Citation

Nandi, S, Liu, X, Venkatachalam, D et al 2015, 'Threshold current reduction for the metal-insulator transition in NbO2-x-selector devices: The effect of ReRAM integration', Journal of Physics D: Applied Physics, vol. 48, no. 19, pp. 1-8.

Year

2015

Fields of Research

  • Nanoelectronics
  • Nanoscale Characterisation

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