Threshold current reduction for the metal-insulator transition in NbO2-x -selector devices: The effect of ReRAM integration
Citation
Nandi, S, Liu, X, Venkatachalam, D et al. 2015, 'Threshold current reduction for the metal-insulator transition in NbO2-x-selector devices: The effect of ReRAM integration', Journal of Physics D: Applied Physics, vol. 48, no. 19, pp. 1-8.Year
2015ANU Authors
Fields of Research
- Nanoelectronics
- Nanoscale Characterisation