Finite Element Modeling of Resistive Switching in Nb2O5-based Memory Device

Citation

Liu, X, Nandi, S, Venkatachalam, D et al 2014, 'Finite Element Modeling of Resistive Switching in Nb2O5-based Memory Device', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014), ed. Martyniuk M.Faraone, IEEE, New York, pp. 280-283.

Year

2014

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

Updated:  26 September 2021 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers