Quantitative dopant distributions in GaAs nanowires using atom probe tomography

Citation

Du, S, Burgess, T, Gault, B et al 2013, 'Quantitative dopant distributions in GaAs nanowires using atom probe tomography', Ultramicroscopy, vol. 132, pp. 186-192.

Year

2013

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Nanofabrication, Growth And Self Assembly
  • Atomic, Molecular, Nuclear, Particle And Plasma Physics Not Elsewhere Classified

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