Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Citation
Du, S, Burgess, T, Gault, B et al. 2013, 'Quantitative dopant distributions in GaAs nanowires using atom probe tomography', Ultramicroscopy, vol. 132, pp. 186-192.Year
2013ANU Authors
Fields of Research
- Surfaces And Structural Properties Of Condensed Matter
- Atomic, Molecular, Nuclear, Particle And Plasma Physics Not Elsewhere Classified
- Nanofabrication, Growth And Self Assembly