High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films

Citation

Xu, H, Wang, Y, Guo, Y et al 2012, 'High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films', Crystal Growth & Design, vol. 12, no. 4, pp. 2018-2022.

Year

2012

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Compound Semiconductors
  • Nanofabrication, Growth And Self Assembly

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