High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Citation
Xu, H, Wang, Y, Guo, Y et al. 2012, 'High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films', Crystal Growth & Design, vol. 12, no. 4, pp. 2018-2022.Year
2012ANU Authors
Fields of Research
- Surfaces And Structural Properties Of Condensed Matter
- Compound Semiconductors
- Nanofabrication, Growth And Self Assembly