Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Citation

Xu, H, Guo, Y, Wang, Y et al 2009, 'Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si', Journal of Applied Physics, vol. 106, no. 083514, pp. 1-4.

Year

2009

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

Updated:  31 October 2020 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers