Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Citation

Guo, Y, Zou, J, Joyce, H et al 2010, 'Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 51-52.

Year

2010

Fields of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges
  • Nanotechnology
  • Electronic And Magnetic Properties Of Condensed Matter; Superconductivity

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