Can insulating the gates lead us to stable modulation-doped hole quantum devices?

Citation

Waddington, D, Burke, A, Fricke, S et al 2010, 'Can insulating the gates lead us to stable modulation-doped hole quantum devices?', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 199-200.

Year

2010

Fields of Research

  • Condensed Matter Physics
  • Materials Engineering
  • Nanotechnology

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