Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Citation
Guo, Y, Zou, J, Joyce, H et al. 2010, 'Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 51-52.
Year
2010
Fields of Research
- Plasma Physics; Fusion Plasmas; Electrical Discharges
- Nanotechnology Not Elsewhere Classified
