Electronic properties of Ga... - Researchers

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

Citation

Joyce, H, Docherty, C, Gao, Q et al. 2013, 'Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy', Nanotechnology, vol. 24, no. 21, p. 7.

Year

2013

ANU Authors

Professor H. Hoe Tan
Professor Chennupati Jagadish

Fields of Research

Nonlinear Optics And Spectroscopy
Nanofabrication, Growth And Self Assembly

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