Quantification of the zinc dopant concentration in GaAs nanowires
Citation
Burgess, T, Du, S, Gault, B et al. 2012, 'Quantification of the zinc dopant concentration in GaAs nanowires', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 41-42.Year
2012ANU Authors
Fields of Research
- Surfaces And Structural Properties Of Condensed Matter
- Nanofabrication, Growth And Self Assembly