Quantification of the zinc dopant concentration in GaAs nanowires

Citation

Burgess, T, Du, S, Gault, B et al 2012, 'Quantification of the zinc dopant concentration in GaAs nanowires', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 41-42.

Year

2012

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Nanofabrication, Growth And Self Assembly

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