Shell formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect

Citation

Guo, Y, Zou, J, Burgess, T et al 2012, 'Shell formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 51-52.

Year

2012

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Compound Semiconductors

Updated:  21 October 2020 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers