Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Citation
McKerracher, I, Fu, L, Tan, H et al. 2012, 'Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers', Journal of Applied Physics, vol. 112, no. 11, pp. 1-11.Year
2012Fields of Research
- Photonics, Optoelectronics And Optical Communications
- Photodetectors, Optical Sensors And Solar Cells
