Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Citation

Chen, Z, Lei, W, Chen, B et al. 2012, 'Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?', Nanoscale Research Letters, vol. 7, no. 1, pp. 486-486.

Year

2012

ANU Authors

Fields of Research

  • Photonics, Optoelectronics And Optical Communications
  • Photodetectors, Optical Sensors And Solar Cells

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