Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Citation

Kim, J, Moon, S, Yoon, H et al 2012, 'Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process', Crystal Growth & Design, vol. 12, no. 1, pp. 135-141.

Year

2012

Fields of Research

  • Nanofabrication, Growth And Self Assembly
  • Elemental Semiconductors

Updated:  20 October 2020 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers