The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Citation
Jolley, G, Fu, L, Tan, H et al. 2010, 'The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors', Nanoscale, vol. 2, no. 7, pp. 1128-1133.Year
2010Field of Research
- Nanomaterials