The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Citation

Jolley, G, Fu, L, Tan, H et al 2010, 'The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors', Nanoscale, vol. 2, no. 7, pp. 1128-1133.

Year

2010

Field of Research

  • Nanomaterials

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