Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

Citation

Du, S, Fu, L, Tan, H et al 2010, 'Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells', Semiconductor Science and Technology, vol. 25, no. 5, p. 7.

Year

2010

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

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