On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire

Citation

Ma, T, Chen, X, Kuang, Y et al. 2019, 'On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire', Applied Physics Letters, vol. 115, no. 18, pp. 1-5.

Year

2019

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Compound Semiconductors
  • Microelectronics And Integrated Circuits

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