On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire
Citation
Ma, T, Chen, X, Kuang, Y et al. 2019, 'On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire', Applied Physics Letters, vol. 115, no. 18, pp. 1-5.Year
2019Fields of Research
- Surfaces And Structural Properties Of Condensed Matter
- Compound Semiconductors
- Microelectronics And Integrated Circuits
