Realization of p-type galli... - Researchers

Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices

Citation

Shi, Y, Ren, F, Xu, W et al. 2019, 'Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices', Scientific Reports, vol. 9, no. 0.

Year

2019

ANU Authors

Professor H. Hoe Tan
Professor Chennupati Jagadish

Fields of Research

Electronic And Magnetic Properties Of Condensed Matter; Superconductivity
Compound Semiconductors

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