Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy

Citation

Babinski, M, Siwiec-Matuszyk, J, Baranowski, J et al 2000, 'Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy', Applied Physics Letters, vol. 77, pp. 999-1001.

Year

2000

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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