Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As2S3) films and its effect on plasma etching
Citation
Choi, D, Madden, S, Rode, A et al 2007, 'Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As2S3) films and its effect on plasma etching', Journal of Applied Physics, vol. 102, pp. 083532 1-5.Year
2007ANU Authors
Fields of Research
- Surfaces And Structural Properties Of Condensed Matter
- Nanotechnology Not Elsewhere Classified