Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As2S3) films and its effect on plasma etching

Citation

Choi, D, Madden, S, Rode, A et al 2007, 'Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As2S3) films and its effect on plasma etching', Journal of Applied Physics, vol. 102, pp. 083532 1-5.

Year

2007

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Nanotechnology Not Elsewhere Classified

Updated:  19 April 2024 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers