Electron emission properties of a defect at ~(Ec�0.23eV) in impurity-free disorded n-GaAs

Citation

Deenapanray, P, Meyer, W, Auret, F et al 2003, 'Electron emission properties of a defect at ~(Ec�0.23eV) in impurity-free disorded n-GaAs', Physica B, vol. 340-342, pp. 315-319.

Year

2003

Fields of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified
  • Materials Engineering Not Elsewhere Classified

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