Electron emission properties of a defect at ~(Ec�0.23eV) in impurity-free disorded n-GaAs
Citation
Deenapanray, P, Meyer, W, Auret, F et al 2003, 'Electron emission properties of a defect at ~(Ec�0.23eV) in impurity-free disorded n-GaAs', Physica B, vol. 340-342, pp. 315-319.Year
2003ANU Authors
Fields of Research
- Electrical And Electronic Engineering Not Elsewhere Classified
- Materials Engineering Not Elsewhere Classified