Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Citation
Pellegrino, P, Leveque, P, Lalita, J et al 2001, 'Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon', Physical Review B, vol. 64, pp. 195211/1-10.Year
2001ANU Authors
Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified