Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Citation

Pellegrino, P, Leveque, P, Lalita, J et al 2001, 'Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon', Physical Review B, vol. 64, pp. 195211/1-10.

Year

2001

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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