Implant Isolation of Zn-dop... - Researchers

Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature

Citation

Deenapanray, P, Gao, Q & Jagadish, C 2003, 'Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature', Journal of Applied Physics, vol. 93, no. 11, pp. 9123-9129.

Year

2003

ANU Authors

Professor Chennupati Jagadish

Field of Research

Electrical And Electronic Engineering Not Elsewhere Classified

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