Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Citation
Deenapanray, P, Martin, A & Jagadish, C 2001, 'Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers', Applied Physics Letters, vol. 79, no. 16, pp. 2561-2563.Year
2001ANU Authors
Field of Research
- Plasma Physics; Fusion Plasmas; Electrical Discharges