Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers

Citation

Deenapanray, P, Martin, A & Jagadish, C 2001, 'Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers', Applied Physics Letters, vol. 79, no. 16, pp. 2561-2563.

Year

2001

Field of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges

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