Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Citation
Deenapanray, P & Jagadish, C 2001, 'Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate', Journal of Vacuum Science and Technology B, vol. 19, no. 5, pp. 1962-1966.Year
2001ANU Authors
Field of Research
- Plasma Physics; Fusion Plasmas; Electrical Discharges