A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon

Citation

Lay, M, McCallum, J, De Medeiros Azevedo, G et al 2003, 'A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 437-440.

Year

2003

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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