HYDROGEN PASSIVATION OF INTERSTITIAL IRON IN SILICON BY ANNEALING WITH PECVD SILICON NITRIDE FILMS
Citation
Liu, A, Sun, C & MacDonald, D 2015, 'HYDROGEN PASSIVATION OF INTERSTITIAL IRON IN SILICON BY ANNEALING WITH PECVD SILICON NITRIDE FILMS', European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015, Fraunhofer ISE, Germany, pp. 623-625.Year
2015ANU Authors
Field of Research
- Photodetectors, Optical Sensors And Solar Cells