HYDROGEN PASSIVATION OF INTERSTITIAL IRON IN SILICON BY ANNEALING WITH PECVD SILICON NITRIDE FILMS

Citation

Liu, A, Sun, C & MacDonald, D 2015, 'HYDROGEN PASSIVATION OF INTERSTITIAL IRON IN SILICON BY ANNEALING WITH PECVD SILICON NITRIDE FILMS', European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015, Fraunhofer ISE, Germany, pp. 623-625.

Year

2015

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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