Publications

• Liu, A, Phang, S & MacDonald, D 2022, 'Gettering in silicon photovoltaics: A review', Solar Energy Materials and Solar Cells, vol. 234.
• Le, T, Hameiri, Z, MacDonald, D et al. 2021, 'Impurity gettering by silicon nitride films: kinetics, mechanisms and simulation', 48th Photovoltaic Specialists Conference (PVSC), IEEE, United States, pp. 664-665.
• Liu, A, Yang, Z, Feldmann, F et al. 2021, 'Understanding the impurity gettering effect of polysilicon/oxide passivating contact structures through experiment and simulation', Solar Energy Materials and Solar Cells, vol. 230, pp. 1-8.
• Nguyen, H, Wu, H, Black, L et al. 2020, 'A Correlative Study of Film Lifetime, Hydrogen Content, and Surface Passivation Quality of Amorphous Silicon Films on Silicon Wafers', IEEE Journal of Photovoltaics, vol. 10, no. 5, pp. 7-12.
• Sun, c, Liu, A, Samadi, A et al. 2019, 'Transition Metals in a Cast-Monocrystalline Silicon Ingot Studied by Silicon Nitride Gettering', Physica Status Solidi: Rapid Research Letters, vol. 13, no. 12, pp. 1-4.
• Truong, T, Yan, D, Samundsett, C et al. 2019, 'Hydrogen-Assisted Defect Engineering of Doped Poly-Si Films for Passivating Contact Solar Cells', ACS Applied Energy Materials, vol. 2, no. 12, pp. 8783-8791.
• Liu, A, Hameiri, Z, Wan, Y et al 2019, 'Gettering Effects of Silicon Nitride Films from Various Plasma-Enhanced Chemical Vapor Deposition Conditions', IEEE Journal of Photovoltaics, vol. 9, no. 1, pp. 78-81.
• Liu, A, Sun, c, Sio, H et al 2019, 'Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion', Journal of Applied Physics, vol. 125, no. 4, pp. -.
• Liu, A, Yan, D, Wong Leung, Y et al. 2018, 'Direct observation of the impurity gettering layers in polysilicon-based passivating contacts for silicon solar cells', ACS Applied Energy Materials, vol. 1, pp. 2275-2282.
• Nguyen, H, Liu, A, Yan, D et al. 2018, 'Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells', ACS Applied Energy Materials, vol. 1, no. 11, pp. 6619-6625.
• Liu, A & MacDonald, D 2018, 'Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures', Physica Status Solidi: Rapid Research Letters, vol. 12, no. 3, pp. 1-5.
• Liu, A, Yan, D, Phang, S et al. 2018, 'Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cells', Solar Energy Materials and Solar Cells, vol. 179, pp. 136-141pp.
• Wu, H, Nguyen, H, Liu, A et al. 2018, 'Reconstructing photoluminescence spectra at liquid nitrogen temperature from heavily boron-doped regions of crystalline silicon solar cells', Progress in Photovoltaics: Research and Applications, vol. 26, no. 8, pp. 587-596.
• Liu, A, Yan, D, Wong Leung, Y et al. 2018, 'Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells', 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, IEEE, United States, pp. 1667-1671pp.
• Altermatt, P, et al., 2018, 'High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells', Solar Energy, vol. 175, pp. 68-74pp.
• Liu, A, Nguyen, H & MacDonald, D 2017, 'Photoluminescence Spectra of Moderately Doped, Compensated Silicon Si:P,B at 79-300 K', IEEE Journal of Photovoltaics, vol. 7, no. 2, pp. 581-589.
• Liu, A & MacDonald, D 2017, 'Impurity gettering effect of atomic layer deposited aluminium oxide films on silicon wafers', Applied Physics Letters, vol. 110, no. 19, pp. -.
• Liu, A, Sun, c, Markevich, V et al. 2017, 'The gettering effect of dielectric films for silicon solar cells', 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, ed. IEEE, IEEE, TBC, pp. 1485-1490.
• Liu, A, Nguyen, H & MacDonald, D 2016, 'Silicon Luminescence Spectra Modelling and the Impact of Dopants', 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016, ed. A Weeber, J Poortmans, Elserier, TBC, pp. 852-856.
• Liu, A, Sun, C, Markevich, V et al 2016, 'Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films', Journal of Applied Physics, vol. 120, no. 19, pp. 10pp.
• Liu, A, Nguyen, H & MacDonald, D 2016, 'Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K', Physica Status Solidi A, vol. 213, no. 11, pp. 3029-3032.
• Sun, C, Liu, A, Rougieux, F et al 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', Energy Procedia, vol. 77, pp. 646-650.
• Sun, c, Liu, A, Phang, S et al. 2015, 'Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon', Journal of Applied Physics, vol. 118, no. 8, pp. 1-10.
• MacDonald, D, Liu, A, Nguyen, H et al. 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015, Fraunhofer ISE, Germany, pp. 440-443.
• Liu, A, Sun, C & MacDonald, D 2015, 'HYDROGEN PASSIVATION OF INTERSTITIAL IRON IN SILICON BY ANNEALING WITH PECVD SILICON NITRIDE FILMS', European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015, Fraunhofer ISE, Germany, pp. 623-625.
• Liu, A & MacDonald, D 2014, 'Precipitation of iron in multicrystalline silicon during annealing', Journal of Applied Physics, vol. 115, no. 11.
• Liu, A, Sun, C & MacDonald, D 2014, 'Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing', Journal of Applied Physics, vol. 116, no. 19, pp. 1-11.
• Liu, A & MacDonald, D 2014, 'Precipitation of interstitial iron in multicrystalline silicon', Solid State Phenomena, vol. 205-206, pp. 34-39.
• MacDonald, D, Liu, A & Phang, S 2014, 'External and internal gettering of interstitial iron in silicon for solar cells', 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, ed. J D Murphy, Conference Organising Committee, Oxford UK, pp. 26-33.
• Liu, A, Walter, D, Phang, S et al. 2012, 'Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imaging', IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 479-484.
• Liu, A, Walter, D & MacDonald, D 2012, 'Studying precipitation and dissolution of iron in multicrystalline silicon wafers during annealing', International Photovoltaic Science and Engineering Conference (PVSEC 2012), ed. YANG Deren, Chinese Renewable Energy Society, Hangzhou China, p. 4.
• Liu, A, Walter, D, Phang, S et al. 2012, 'Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon', IEEE Photovoltaic Specialists Conference (PVSC 2012), Curran Associates, Inc., Austin, TX, USA.
• MacDonald, D, Phang, S & Liu, A 2012, 'Detection and reduction of iron impurities in silicon solar cells', International Symposium on Advanced Science and Technology of Silicon Materials 2012, Japan Society for the Promotion of Science, Tokyo, Japan, p. 4.
• Walter, D, Liu, A, Franklin, E et al 2012, 'Contrast Enhancement of Luminescence Images via Point-Spread Deconvolution', IEEE Photovoltaic Specialists Conference (PVSC 2012), Curran Associates, Inc., Austin, TX, USA, pp. 307-312.
• Liu, A, Fan, Y & MacDonald, D 2011, 'Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging', Progress in Photovoltaics: Research and Applications, vol. 19, no. 6, pp. 649-657.
• MacDonald, D, Liu, A, Cuevas, A et al 2011, 'The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon', Physica Status Solidi A, vol. 208, no. 3, pp. 559-563.
• MacDonald, D & Liu, A 2010, 'Recombination activity of iron-boron pairs in compensated p-type silicon', Physica Status Solidi B (On-line), vol. 247, no. 9, pp. 2218-2221.
• Lim, B, Liu, A, MacDonald, D et al 2009, 'Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon', Applied Physics Letters, vol. 95, pp. 232109/1-3.
• MacDonald, D, Liu, A, Rougieux, F et al 2009, 'Boron-Oxygen defects in compensated P-Type Czochralski Silicon', IEEE Photovoltaic Specialists Conference (PVSC 2009), Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 1-6.

Projects and Grants

Grants information is drawn from ARIES. To add or update Projects or Grants information please contact your College Research Office.

• Understanding and engineering polysilicon based passivating contacts for photovoltaic applications (Secondary Investigator)
• New impurity removal technologies for low-cost, high-efficiency silicon solar cells. (Primary Investigator)