Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density

Citation

Rougieux, F & MacDonald, D 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, vol. 104, no. 12, pp. 1-4.

Year

2014

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