Influence of the NH3:SiH4 ratio and surface morphology on the surface passivation of phosphorus-diffused C-Si by PECVD SiNx
Citation
Wan, Y, Yan, D, Cuevas, A et al 2014, 'Influence of the NH3:SiH4 ratio and surface morphology on the surface passivation of phosphorus-diffused C-Si by PECVD SiNx', 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, IEEE, USA, pp. 3317-3321.
Year
2014
Fields of Research
- Classical And Physical Optics
- Electrical And Electronic Engineering Not Elsewhere Classified
- Materials Engineering Not Elsewhere Classified