Influence of the NH3:SiH4 ratio and surface morphology on the surface passivation of phosphorus-diffused C-Si by PECVD SiNx

Citation

Wan, Y, Yan, D, Cuevas, A et al 2014, 'Influence of the NH3:SiH4 ratio and surface morphology on the surface passivation of phosphorus-diffused C-Si by PECVD SiNx', 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, IEEE, USA, pp. 3317-3321.

Year

2014

Fields of Research

  • Classical And Physical Optics
  • Electrical And Electronic Engineering Not Elsewhere Classified
  • Materials Engineering Not Elsewhere Classified

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