Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon

Citation

Zheng, P, Rougieux, F, MacDonald, D et al 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, IEEE, USA, pp. 129-134.

Year

2014

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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