Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
Citation
Forster, M, Fourmond, E, Rougieux, F et al 2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, vol. 100, no. 4, p. 4.Year
2012ANU Authors
Field of Research
- Photodetectors, Optical Sensors And Solar Cells