Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Citation

Forster, M, Fourmond, E, Rougieux, F et al 2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, vol. 100, no. 4, p. 4.

Year

2012

ANU Authors

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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