Acceptor-related metastable defects in compensated n-type silicon
Citation
Rougieux, F, Phang, S, Shalav, A et al. 2012, 'Acceptor-related metastable defects in compensated n-type silicon', International Photovoltaic Science and Engineering Conference (PVSEC 2012), ed. YANG Deren, Chinese Renewable Energy Society, Hangzhou China, p. 6.Year
2012Field of Research
- Photodetectors, Optical Sensors And Solar Cells