Acceptor-related metastable defects in compensated n-type silicon

Citation

Rougieux, F, Phang, S, Shalav, A et al 2012, 'Acceptor-related metastable defects in compensated n-type silicon', International Photovoltaic Science and Engineering Conference (PVSEC 2012), ed. YANG Deren, Chinese Renewable Energy Society, Hangzhou China, p. 6.

Year

2012

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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