Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon

Citation

Rougieux, F, Forster, M, MacDonald, D et al 2011, 'Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon', IEEE Journal of Photovoltaics, vol. 1, no. 1, pp. 54-58.

Year

2011

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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