Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon
Citation
Rougieux, F, Forster, M, MacDonald, D et al 2011, 'Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon', IEEE Journal of Photovoltaics, vol. 1, no. 1, pp. 54-58.Year
2011ANU Authors
Field of Research
- Photodetectors, Optical Sensors And Solar Cells