The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon

Citation

MacDonald, D, Liu, A, Cuevas, A et al 2011, 'The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon', Physica Status Solidi A, vol. 208, no. 3, pp. 559-563.

Year

2011

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

Updated:  27 September 2021 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers