Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

Citation

Rougieux, F, Lim, B, Schmidt, J et al 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, vol. 110, no. 6, pp. 063708-5.

Year

2011

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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