Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
Citation
Rougieux, F, Lim, B, Schmidt, J et al 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, vol. 110, no. 6, pp. 063708-5.Year
2011ANU Authors
Field of Research
- Photodetectors, Optical Sensors And Solar Cells