Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence

Citation

Lim, S & MacDonald, D 2011, 'Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence', Solar Energy Materials and Solar Cells, vol. 95, no. 8, pp. 2485-2489.

Year

2011

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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