Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence
Citation
Lim, S & MacDonald, D 2011, 'Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence', Solar Energy Materials and Solar Cells, vol. 95, no. 8, pp. 2485-2489.Year
2011ANU Authors
Field of Research
- Photodetectors, Optical Sensors And Solar Cells