Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

Citation

Rougieux, F, MacDonald, D, Cuevas, A et al 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon', Journal of Applied Physics, vol. 108, no. 1, pp. 1-5.

Year

2010

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

Updated:  29 September 2021 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers