Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon
Citation
Rougieux, F, MacDonald, D, Cuevas, A et al 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon', Journal of Applied Physics, vol. 108, no. 1, pp. 1-5.Year
2010ANU Authors
Field of Research
- Photodetectors, Optical Sensors And Solar Cells