Generation and annihilation of boron-oxygen-related recombination centers in compensated p- and n-type silicon

Citation

Lim, B, Rougieux, F, MacDonald, D et al 2010, 'Generation and annihilation of boron-oxygen-related recombination centers in compensated p- and n-type silicon', Journal of Applied Physics, vol. 108, no. 10, pp. 1-9.

Year

2010

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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