Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Citation

Rougieux, F, MacDonald, D, McIntosh, K et al 2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, vol. 25, no. 5, p. 5.

Year

2010

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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