The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface

Citation

Jin, H, Jellett, W, Chun, Z et al 2008, 'The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface', Applied Physics Letters, vol. 92, no. 12, pp. 122109-1 to 122109-3.

Year

2008

Field of Research

  • Structural Chemistry And Spectroscopy

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