Relationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure
Citation
Jin, H & Weber, K 2008, 'Relationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure', European Photovoltaic Solar Energy Conference 2008, ed. Conference Program Committee, Conference Organising Committee, Munich, pp. 244-247.
Year
2008
Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified
