Relationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure

Citation

Jin, H & Weber, K 2008, 'Relationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure', European Photovoltaic Solar Energy Conference 2008, ed. Conference Program Committee, Conference Organising Committee, Munich, pp. 244-247.

Year

2008

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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