Boron-Oxygen defects in compensated P-Type Czochralski Silicon

Citation

MacDonald, D, Liu, A, Rougieux, F et al 2009, 'Boron-Oxygen defects in compensated P-Type Czochralski Silicon', IEEE Photovoltaic Specialists Conference (PVSC 2009), Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 1-6.

Year

2009

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

Updated:  20 April 2024 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers