Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon

Citation

MacDonald, D, Roth, T, Deenapanray, P et al 2006, 'Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon', Applied Physics Letters, vol. 89, no. 14, p. 142107.

Year

2006

Fields of Research

  • Optical Networks And Systems
  • Electrical And Electronic Engineering Not Elsewhere Classified

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