Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon
Citation
MacDonald, D, Roth, T, Deenapanray, P et al 2006, 'Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon', Applied Physics Letters, vol. 89, no. 14, p. 142107.Year
2006ANU Authors
Fields of Research
- Optical Networks And Systems
- Electrical And Electronic Engineering Not Elsewhere Classified
