Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

Citation

MacDonald, D, Rougieux, F, Cuevas, A et al 2009, 'Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon', Journal of Applied Physics, vol. 105, no. 9, pp. 093704/1-7.

Year

2009

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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