Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon
Citation
MacDonald, D, Rougieux, F, Cuevas, A et al 2009, 'Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon', Journal of Applied Physics, vol. 105, no. 9, pp. 093704/1-7.Year
2009ANU Authors
Field of Research
- Photodetectors, Optical Sensors And Solar Cells