The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon

Citation

MacDonald, D, Deenapanray, P, Cuevas, A et al 2005, 'The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon', Solid State Phenomena, vol. 108-109, pp. 497-502.

Year

2005

Field of Research

  • Materials Engineering Not Elsewhere Classified

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