The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon
Citation
MacDonald, D, Deenapanray, P, Cuevas, A et al 2005, 'The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon', Solid State Phenomena, vol. 108-109, pp. 497-502.Year
2005ANU Authors
Field of Research
- Materials Engineering Not Elsewhere Classified