High rate etching of 4H-SiC using a SF6/O2 helicon plasma
Citation
Chabert, P, Proust, N, Perrin, J et al 2000, 'High rate etching of 4H-SiC using a SF6/O2 helicon plasma', Applied Physics Letters, vol. 76, no. 16, pp. 2310-2312.Year
2000ANU Authors
Field of Research
- Plasma Physics; Fusion Plasmas; Electrical Discharges
