Recombination activity of interstitial iron and other transition metal point defects in p-type and n-type crystalline silicon

Citation

MacDonald, D & Geerligs, L 2004, 'Recombination activity of interstitial iron and other transition metal point defects in p-type and n-type crystalline silicon', Applied Physics Letters, vol. 85, no. 18, pp. 4061-4063.

Year

2004

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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