Recombination activity of interstitial iron and other transition metal point defects in p-type and n-type crystalline silicon
Citation
MacDonald, D & Geerligs, L 2004, 'Recombination activity of interstitial iron and other transition metal point defects in p-type and n-type crystalline silicon', Applied Physics Letters, vol. 85, no. 18, pp. 4061-4063.Year
2004ANU Authors
Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified