High external quantum efficiency from double heterostructure InGaP/GaAs layers as selective emitters for thermophotonic systems

Citation

Lin, K, Catchpole, K, Campbell, P et al 2004, 'High external quantum efficiency from double heterostructure InGaP/GaAs layers as selective emitters for thermophotonic systems', Semiconductor Science and Technology, vol. 19, no. 11, pp. 1268-1272.

Year

2004

Field of Research

  • Materials Engineering

Updated:  20 June 2019 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers